Electrical & Electronic Engineering

Dr. Md. Tashfiq Bin Kashem

Research Interests

• Thermoelectric effects in electronic devices
• Semiconductor memory devices
• Electronic transport in semiconductor devices

Educational Background

• PhD, (Electrical Engineering), University of Connecticut, Storrs, Connecticut, USA
• Master of Science (MSc), (Electrical and Electronic Engineering), Bangladesh University of Engineering and Technology (BUET)
• Bachelor of Science (BSc), (Electrical and Electronic Engineering), Bangladesh University of Engineering and Technology (BUET)

Honors and Achievements

• 1st Place in ECE & IEEE PELS/PES Poster Competition, University of Connecticut, 2023
• Doctoral Dissertation Fellowship, University of Connecticut, 2023
• Engineering Admin Fellowship, University of Connecticut, 2022
• Conference Participation Fellowship, University of Connecticut, 2022
• Departmental Champion in 8th SoE Annual Graduate Poster Competition, School of Engineering, University of Connecticut, 2022
• Graduate Fellowship for Innovation, General Electric, 2020
• Pre-doctoral Fellowship, University of Connecticut, 2020
• Best Teaching Assistant, ECE Department, University of Connecticut, 2019
• Graduate Research Assistantship, United States National Science Foundation (US NSF), 2018
• Graduate Teaching Assistantship, ECE Department, University of Connecticut, 2018
• University Dean’s List Award, Bangladesh University of Engineering and Technology (BUET), 2011
• University Dean’s List Award, Bangladesh University of Engineering and Technology (BUET), 2010
• University Dean’s List Award, Bangladesh University of Engineering and Technology (BUET), 2009
• University Dean’s List Award, Bangladesh University of Engineering and Technology (BUET), 2008
• Dhaka Education Board Scholarship, Dhaka Board, 2006
• Dhaka Education Board Scholarship, Dhaka Board, 2004

Publications

• Electronic transport in amorphous Ge2Sb2Te5 phase-change memory line cells and its response to photoexcitation, Applied Physics Letters, 2024
• Resistance Drift in Melt-Quenched Ge2Sb2Te5 Phase Change Memory Line Cells at Cryogenic Temperatures, ECS Journal of Solid State Science and Technology, 2024
• Modeling Reset, Set and Read Operations in Nanoscale Ge2Sb2Te5 Phase-Change Memory Devices Using Electric field- and Temperature-Dependent Material Properties, physica status solidi (RRL) - Rapid Research Letters, 2023
• Finite Element Analysis of GeTe/Ge2Sb2Te5 Interfacial Phase Change Memory Devices, 2022 20th Non-Volatile Memory Technology Symposium (NVMTS), 2022
• Calculation of the Energy Band Diagram and Estimation of Electronic Transport Parameters of Metastable Amorphous Ge2Sb2Te5, ECS Transactions, 2022
• Finite Element Modeling of Thermoelectric Effects in Phase Change Memory Cells, ECS Transactions, 2022
• Computational Analysis of Joule Heating Effect in Triple Material Gate AlGaN/GaN High Electron Mobility Transistor, ECS Transactions, 2021
• Reset variability in phase change memory for hardware security applications, IEEE Transactions on Nanotechnology, 2020
• Analytical modeling of channel potential and threshold voltage of triple material gate AlGaN/GaN HEMT including trapped and polarization‐induced charges, International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2019
• Characteristic analysis of triple material tri-gate junctionless tunnel field effect transistor, 2016 9th International Conference on Electrical and Computer Engineering (ICECE), 2016
• Characteristics of Triple Material Gate AlGaN/GaN High Electron Mobility Transistor, 2015 International Conference on Advances in Electrical Engineering (ICAEE), 2015
• Thermal conductivity of single layer graphene supported on silicon nitride/silicon substrates, 2015 IEEE International WIE Conference on Electrical and Computer Engineering (WIECON-ECE), 2015
• Characteristics of Fully Depleted Four-Gate Field Effect Transistor with Localized Interface Charges: A 3-D Simulation Study, Journal of Nanoelectronics and Optoelectronics, 2015
• Study on doping profile and scaling characteristics of gate and channel engineered symmetric double gate MOSFET, 2016 9th International Conference on Electrical and Computer Engineering (ICECE), 0